@inproceedings{memristor:challange_ASPDAC2011,
 author = {Chang, M. and Chiu, P. and Sheu, S.},
 title = {Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC},
 booktitle = {Proceedings of the 16th Asia and South Pacific Design Automation Conference},
 series = {ASPDAC '11},
 year = {2011},
 isbn = {978-1-4244-7516-2},
 location = {Yokohama, Japan},
 pages = {197--203},
 numpages = {7},
}



@INPROCEEDINGS{memristor:LER,
author={Oldiges, P. and others},
booktitle={Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on}, title={Modeling line edge roughness effects in sub 100 nanometer gate length devices},
year={2000},
volume={},
number={},
pages={131 -134},
keywords={100 nm;3D simulations;MOS transistor;device parameters;gate length;line edge roughness;line edge roughness effects modeling;line edge roughness variation;multiple 2D device slices;rough edge MOS transistors;statistical study;MOSFET;nanotechnology;rough surfaces;semiconductor device models;statistical analysis;},
doi={10.1109/SISPAD.2000.871225},
ISSN={},}

@INPROCEEDINGS{memristor:ASPDAC,
 author = {M. Hu and others},
 booktitle = {Proceedings of ASP-DAC 2011},
 title = {Geometry Variations Analysis of TiO2 Thin-Film and Spintronic Memristors},
 year={2011},
}



@INPROCEEDINGS{memristor:Cong,
  author = {C. Xu and others},
  title = {Design Implications of Memristor-Based {RRAM} Cross-Point Structures},
  booktitle = {Proc. of Design Automation Test in Europe Conference (DATE)},
  page = {1-6},
  year = {2011},
}


@MISC{memristor:HpHynix,
  title = {http://www.hpl.hp.com/news/2010/jul-sep/memristorhynix.html}
}

@INPROCEEDINGS{memristor:analog222,
  author = {Q. Yu and others},
  title = {Transmission Characteristics Study of Memristors Based Op-Amp Circuits},
  journal = {ICCCAS},
  year = {2009}
}

@INPROCEEDINGS{memristor:Spin_Wang,
author={Xiaobin Wang and Yiran Chen and Haiwen Xi and Hai Li and Dimitrov, D.},
journal={Electron Device Letters, IEEE}, title={Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion},
year={2009},
month={mar.},
volume={30},
number={3},
pages={294 -297},
keywords={electronic charge transport;magnetic-domain-wall motion;memristive effects;spin-torque-induced magnetization motion;spin-torque-induced magnetization switching;spintronic memristor;digital circuits;magnetoelectronics;resistors;},
doi={10.1109/LED.2008.2012270},
ISSN={0741-3106},}

@INPROCEEDINGS{memristor:Spin_Wang_2,
author={Xiaobin Wang and Yiran Chen},
booktitle={Design, Automation Test in Europe Conference Exhibition (DATE), 2010}, title={Spintronic memristor devices and application},
year={2010},
month=march,
volume={},
number={},
pages={667 -672},
keywords={CMOS;information security;multibit data storage;nanoscale memristors;power management;spin torque memristors;spintronic memristor devices;spintronic memristor potential applications;CMOS integrated circuits;magnetoelectronics;memristors;torque;},
doi={},
ISSN={1530-1591},}

@INPROCEEDINGS{memristor:analog333,
  author = {K. Witrisal},
  title = {A memristor-based multicarrier UWB receiver},
  journal = {ICUWB},
  year = {2009}
}
@INPROCEEDINGS{memristor:analog444,
  author = {W. Wang, Q. Yu, C. Xu, and Y. Cui},
  title = {Study of filter characteristics based on PWL memristor},
  journal = {ICCCAS},
  year = {2009}
}


@ARTICLE{memristor:neural2,
  author = {H. Choi and others},
  title = {An electrically modifiable synapse array of resistive switching memory},
  journal = {Nanotechnology},
  year = {2009}
}

@ARTICLE{memristor:CMOS2,
  author = {Xia, Qiangfei and Robinett, Warren and Cumbie, Michael W. and others},
  title = {Memristor-CMOS Hybrid Integrated Circuits for Reconfigurable Logic},
  journal = {Nano Letters},
  year = {2009}
}


@ARTICLE{memristor:chua,
  author = {Chua, L.},
  title = {Memristor-The missing circuit element},
  journal = {IEEE Transactions on Circuit Theory},
  year = {1971},
  number = {5},
  month = {Sep},
  issn = {0018-9324},
  keywords = {null Memristors, Network elements, Nonlinear network analysis &, design}
}

@INPROCEEDINGS{crossbar:challenges,
  author = {M. Dong and L. Zhong},
  title = {Challenges to Crossbar Integration of Nanoscale Two-Terminal Symmetric
	Memory Devices},
  booktitle = {NANO},
  year = {2008},
  pages = {692 -694},
  month = {Aug},
  journal = {Nanotechnology, 2008. NANO '08. 8th IEEE Conference on},
  keywords = {crossbar integration;crossbar-based memory organization;delay;electrical
	properties;nanoscale two-terminal symmetric memory devices;performance
	bottleneck;power consumption;resistive memory devices;delays;integrated
	memory circuits;nanoelectronics;}
}

@INPROCEEDINGS{xiangyu,
  author = {Dong, X. and Jouppi, N. and Xie, Y.},
  title = {{PCRAMsim}: system-level performance, energy, and area modeling for
	phase-change ram},
  booktitle = {ICCAD},
  year = {2009},
  pages = {269--275},
  address = {New York, NY, USA},
  publisher = {ACM},
  doi = {http://doi.acm.org/10.1145/1687399.1687449},
  isbn = {978-1-60558-800-1},
  location = {San Jose, California}
}

@ARTICLE{memristor:flexible,
  author = {Gergel-Hackett, N. and Hamadani, B. and Dunlap, B. and Suehle, J.
	and Richter, C. and Hacker, C. and Gundlach, D.},
  title = {A Flexible Solution-Processed Memristor},
  journal = {Electron Device Letters, IEEE},
  year = {2009},
  volume = {30},
  pages = {706-708},
  number = {7},
  month = {July },
  doi = {10.1109/LED.2009.2021418},
  issn = {0741-3106},
  keywords = {flexible electronics, resistors, sol-gel processing, titanium compoundsTiO2,
	flexible solution-processed memristor, memory behavior, nonvolatile
	device, polymer sheet, rewriteable low-power operation, sol-gel method,
	spinning, temperature 293 K to 298 K}
}

@INPROCEEDINGS{crossbar:future,
  author = {Haron, N.Z. and Hamdioui, S.},
  title = {Emerging crossbar-based hybrid nanoarchitectures for future computing
	systems},
  year = {2008},
  pages = {1 -6},
  month = {nov.},
  doi = {10.1109/ICSCS.2008.4746939},
  journal = {Signals, Circuits and Systems, 2008. SCS 2008. 2nd International
	Conference on},
  keywords = {CMOS-based architectures;computing systems;crossbar arrays;crossbar-based
	hybrid nanoarchitectures;three-dimensional structures;two-dimensional
	structures;CMOS integrated circuits;nanotechnology;}
}

@INPROCEEDINGS{memristor:pengli,
  author = {Ho, Y and Huang, G. M. and Li, P. },
  title = {Nonvolatile memristor memory: device characteristics and design implications},
  booktitle = {ICCAD},
  year = {2009},
  month = {Nov.}
}

@INPROCEEDINGS{memristor:CMOS,
  author = {Jo,Sung Hyun and Kim, Kuk-Hwan and Lu, Wei},
  title = {High-Density Crossbar Arrays Based on a Si Memristive System},
  booktitle = {Nano Lett.},
  year = {2009},
  volume = {9},
  pages = {870-874}
}

@ARTICLE{memristor:elusive,
  author = {Yogesh N. Joglekar and Stephen J. Wolf},
  title = {The elusive memristor: properties of basic electrical circuits},
  journal = {EUR.J.PHYS.},
  year = {2009},
  volume = {30},
  pages = {661},
  url = {doi:10.1088/0143-0807/30/4/001}
}

@INPROCEEDINGS{memristor:candidate1,
  author = {Kavehei, O. and others},
  title = {The fourth element: Insights into the memristor},
  booktitle = {ICCCAS},
  year = {2009},
  journal = {Communications, Circuits and Systems, 2009. ICCCAS 2009. International
	Conference on},
  keywords = {ASIC;Chua argumentation;FPGA;Maxwell equations;SPICE macromodel;application
	specific integrated circuits;electromagnetic theory;field programmable
	gate arrays;fourth element;integrated circuits;memristor;nanoelectronics;quasistatic
	expansion;Maxwell equations;SPICE;application specific integrated
	circuits;field programmable gate arrays;nanoelectronics;resistors;}
}

  	
@article{memristor:logarithm,
  author={G. Medeiros-Ribeiro and others},
  title={Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution},
  journal={Nanotechnology},
  volume={22},
  number={9},
  pages={095702},
  url={http://stacks.iop.org/0957-4484/22/i=9/a=095702},
  year={2011},
  abstract={We measured the switching time statistics for a TiO 2 memristor and found that they followed a lognormal distribution, which is a potentially serious problem for computer memory and data storage applications. We examined the underlying physical phenomena that determine the switching statistics and proposed a simple analytical model for the distribution based on the drift/diffusion equation and previously measured nonlinear drift behavior. We designed a closed-loop switching protocol that dramatically narrows the time distribution, which can significantly improve memory circuit performance and reliability.}
}



@INPROCEEDINGS{crossbar:yiran1,
  author = {H. Li and Y. Chen},
  title = {An overview of non-volatile memory technology and the implication
	for tools and architectures},
  booktitle = {DATE},
  year = {2009},
  issn = {1530-1591},
  journal = {Design, Automation Test in Europe Conference Exhibition, 2009. DATE
	'09.},
  keywords = {R-RAM;STT-RAM;nonvolatile memory technology;resistive random access
	memory;spin-transfer torque random access memory;random-access storage;semiconductor
	device models;}
}

@ARTICLE{memristor:analog,
  author = {Y. V. Pershin and M. D. Ventra},
journal={Circuits and Systems I: Regular Papers, IEEE Transactions on}, title={Practical Approach to Programmable Analog Circuits With Memristors},
year={2010},
month={ },
volume={PP},
number={99},
pages={1-8},
keywords={},
doi={10.1109/TCSI.2009.2038539},
ISSN={1549-8328},
}


@INPROCEEDINGS{memristor:neural1,
  author = {Y. V. Pershin and M. D. Ventra},
  title = {Experimental demonstration of associative memory with memristive
	neural networks},
  booktitle = {Nature},
  year = {2009}
}

@INPROCEEDINGS{crossbar:digical,
  author = {T. Raja and S. Mourad},
  title = {Digital logic implementation in memristor-based crossbars},
  year = {2009},
  pages = {939 -943},
  month = {july},
  doi = {10.1109/ICCCAS.2009.5250374},
  journal = {Communications, Circuits and Systems, 2009. ICCCAS 2009. International
	Conference on},
  keywords = {digital logic implementation;logic design;memristor-based crossbars;passive
	electronic device;logic design;micromechanical devices;resistors;}
}

@ARTICLE{memristor:missing,
  author = {Strukov, D. B. and others},
  title = {The missing memristor found},
  journal = {Nature},
  year = {2008}
  month={May},
  volume={453},
  pages={80-83},
}

@INPROCEEDINGS{memristor:fourth,
  author = {J. M. Tour and T. He},
  title = {Electronics: The fourth element},
  booktitle = {Nature},
  year = {2008},
  pages = {42-43},
  journal = {Nature}
}

@ARTICLE{memristor:how,
  author = {Williams, R.},
  title = {How We Found The Missing Memristor},
  journal = {IEEE Spectrum},
  year = {2008},
  number = {12},
  month = {Dec},
  doi = {10.1109/MSPEC.2008.4687366},
  issn = {0018-9235},
  keywords = {analogue storage, electric resistance, resistorsapplied voltage, memory
	resistor, memristor, resistance, two-terminal device}
}

@INPROCEEDINGS{memristor:UWB,
  author = {Witrisal, Klaus},
  title = {A memristor-based multicarrier UWB receiver},
  booktitle = {Ultra-Wideband, 2009. ICUWB 2009. IEEE International Conference on},
  year = {2009},
  pages = {679-683},
  month = {Sept.},
  doi = {10.1109/ICUWB.2009.5288703}
}

@INPROCEEDINGS{memristor:switch,
  author = {Yang, J. Joshua and others},
  title = {Memristive switching mechanism for metal/oxide/metal nanodevices},
  booktitle = {Nature Nanotechnology},
  year = {2008},
  volume = {3},
  pages = {429-433},
  month = {Jun}
}

@INPROCEEDINGS{memristor:Unity,
author={Meyer, R. and others},
booktitle={Proc. of Non-Volatile Memory Technology Symposium (NVMTS)},
title={Oxide dual-layer memory element for scalable non-volatile cross-point memory technology},
year={2008},
page = {1-5},
month={Nov.},
}

@INPROCEEDINGS{memristor:dimin_islped,
author={Niu, Dimin and Chen, Yiran and Xie, Yuan},
booktitle={Low-Power Electronics and Design (ISLPED), 2010 ACM/IEEE International Symposium on}, title={Low-power dual-element memristor based memory design},
year={2010},
pages={25 -30},
}


@INPROCEEDINGS{memristor:1D1R,
author={M. Lee and others},
booktitle={Electron Devices Meeting, 2007. IEDM 2007. IEEE International},
title={2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications},
year={2007},
month={Dec},
volume={},
number={},
pages={771 -774},
keywords={CMOS technology;CuOx-InZnOx;bi-stable switching;cross-point structure;fabrication processes;heterojunction thin film;high density resistance RAM applications;oxide diodes;photolithography etching techniques;size 0.5 mum;switch elements;diodes;etching;integrated memory circuits;photolithography;random-access storage;resistors;switching;},
doi={10.1109/IEDM.2007.4419061},
ISSN={},
}

@INPROCEEDINGS{memristor:IEDM08_3D,
author={Lee, M.-J. and others},
booktitle={Prof. of IEEE Int. Electron Devices Meeting (IEDM)},
title={Stack friendly all-oxide {3D RRAM using GaInZnO peripheral TFT} realized over glass substrates},
year={2008},
month={Dec},
volume={},
number={},
pages={1 -4},
keywords={GIZO thin film transistors;GaInZnO-CuO-InZnO-NiO;GalnZnO Peripheral TFT;SiO2;XPS;diode-one resistor;glass substrates;high density nonvolatile data storage;resistance random access memory;stack friendly all-oxide 3D RRAM;X-ray photoelectron spectra;copper compounds;gallium compounds;indium compounds;nickel compounds;random-access storage;semiconductor thin films;thin film transistors;},
doi={10.1109/IEDM.2008.4796620},
ISSN={8164-2284},}

@INPROCEEDINGS{memristor:ICCCAS09_3D,
author={Ji Zhang and others},
booktitle={Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on}, title={A 3D RRAM using stackable 1TXR memory cell for high density application},
year={2009},
month=july,
volume={},
number={},
pages={917 -920},
keywords={3D RRAM concept;resistive random access memory;stackable 1TXR memory cell structure;random-access storage;},
doi={10.1109/ICCCAS.2009.5250369},
ISSN={},}
